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Press Release

July 3, 2013

DISCO Laser Saw Shipments Exceed 800

DISCO Corporation (Headquarters: Ota-ku, Tokyo; President: Kazuma Sekiya) announces that the cumulative shipments for laser saws reached 800 units in June 2013.

Since DISCO laser saws went on sale in 2002, shipments have remained strong even after the achievement of 200 units in January 2010. DISCO shipped more than 600 units during the period of June 2013 from January 2010. Currently, our laser saws have been delivered to more than 150 companies, including top 10 assembly companies and are being used widely throughout the world.

As background to this increased shipment pace, the laser processing technology of a wafer with Low-k film or an LED substrate wafer has been highly appreciated, and DISCO has devoted itself to this area of technology as a technical leader. In addition, our successful field support has a good reputation, by accelerating the development speed under a framework of more than 250 R&D, application and service engineers spread among our affiliate offices.

History of DISCO Laser Business

April 2001 Started development
December 2002 Launched DISCO's first laser saw, the DFL7160
November 2005 Launched a laser saw for DAF (die attach film) cutting
November 2006 Launched a laser saw for sapphire grooving
October 2007 Announced the business collaboration with Hamamatsu Photonics K.K. and launched the DFL7340/7360 using the stealth dicing technology developed by Hamamatsu
November 2008 Launched the compact DAL7020 laser saw with a width of only 600 mm
April 2009 Launched the stealth dicing process for high-intensity LEDs
November 2009 Launched the DFL 7161, a successor model of the DFL7160 with improved basic performance
Launched the DFL7020, a fully automatic laser saw for sapphire LED scribing
November 2011 Launched the DFL7360FH, a stealth dicing laser saw with the ring frame handling specification
February 2012 Shipped a DFL7560 which supports laser lift-off* and via hole processing
*Technology where the material layer formed on the substrate is removed by laser irradiation

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