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Press Release

November 24, 2010

DISCO Corporation has developed an edge trimming technology for TSV wafers

DISCO Corporation (headquarters: Ota-ku, Tokyo, President: Kazuma Sekiya) has developed an innovative technology, which conducts edge trimming after bonding a substrate (support substrate for transfer) and a wafer, for the TSV (Through Silicon Via) wafer manufacturing process.

Development Background & Features
One of the processes which prevents breakage due to edge chipping during wafer thinning is edge trimming.
When using edge trimming on TSV wafers, which conventionally require a high level of cleanliness, the wafer is cleaned after trimming and then bonded to a substrate in order to maintain the cleanliness of the bonded interface (see the below drawing).
This technology, newly developed by DISCO, enables conducting edge trimming after bonding the TSV wafer to a substrate so that cleaning before bonding is not necessary any more. This provides simplification and cost reduction in the process.

Edge Trimming Specification
Process Flow Comparison

Conventional process

New process

Processing quality

The same as for the conventional edge trimming process, the new process prevents the wafer edge from becoming sharp, thereby preventing edge chipping.


Test cutting

as needed

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